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| SMD Type PNP Silicon Planar Medium Power High Gain Transistor FZT788B SOT-223 +0.2 6.50-0.2 Transistors Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Low equivalent on-resistance; RCE(sat) 93mU at 3A. Gain of 300 at IC=2 Amps and Very low saturation voltage. +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 2 2.9 4.6 3 +0.1 0.70-0.1 1 base 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating -15 -15 -5 -8 -3 2 -55 to +150 Unit V V V A A W +0.15 1.65-0.15 Features www.kexin.com.cn 1 SMD Type FZT788B Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector-base cut-off current Emitter Cut-Off Current Symbol Testconditons Min -15 -15 -5 Typ Transistors Max Unit V V V V(BR)CBO IC=-100iA V(BR)CEO IC=-10mA V(BR)EBO IE=-100iA ICBO IEBO VCB=-10V VEB=-4V IC=-0.5A, IB=-2.5mA IC=-1A, IB=-5mA IC=-2A, IB=-10mA IC=-3A, IB=-50mA -0.1 -0.1 -0.15 -0.25 -0.45 -0.5 -0.9 -0.75 500 400 300 150 100 225 25 35 400 1500 iA iA Collector-emitter saturation voltage * VCE(sat) V Base-emitter saturation voltage * Base-emitter ON voltage * VBE(sat) IC=-1A, IB=-5mA VBE(on) IC=-1A, VCE=-2V IC=-10mA,VCE=-2V * V V Static Forward Current Transfer Ratio hFE IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* Transitional frequency Input capacitance Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 is; d 0.02. fT Cibo Cobo t(on) t(off) IC=-50mA, VCE=-5V, f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA MHz pF pF ns ns Marking Marking FZT788B 2 www.kexin.com.cn |
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